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hexfet ? power mosfet pd -91703a fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application. description generation v technology ultra low on-resistance dual n-channel mosfet surface mount available in tape & reel dynamic dv/dt rating fast switching so-8 v dss = 55v r ds(on) = 0.050 ? irf7341 www.irf.com 1 parameter max. units v ds drain- source voltage 55 v i d @ t c = 25c continuous drain current, v gs @ 10v 4.7 i d @ t c = 70c continuous drain current, v gs @ 10v 3.8 a i dm pulsed drain current 38 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipation 1.3 linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10s 30 v e as single pulse avalanche energy 72 dv/dt peak diode recovery dv/dt 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c parameter typ. max. units r ja maximum junction-to-ambient ??? 62.5 c/w thermal resistance absolute maximum ratings d 1 d 1 d 2 d 2 g 1 s 2 g 2 s1 top view 8 1 2 3 4 5 6 7
irf7341 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.059 ??? v/c reference to 25c, i d = 1ma ??? 0.043 0.050 v gs = 10v, i d = 4.7a ??? 0.056 0.065 v gs = 4.5v, i d = 3.8a v gs(th) gate threshold voltage 1.0 ??? ??? v v ds = v gs , i d = 250a g fs forward transconductance 7.9 ??? ??? s v ds = 10v, i d = 4.5a ??? ??? 2.0 v ds = 55v, v gs = 0v ??? ??? 25 v ds = 55v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 24 36 i d = 4.5a q gs gate-to-source charge ??? 2.3 3.4 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? 7.0 10 v gs = 10v, see fig. 10 t d(on) turn-on delay time ??? 8.3 12 v dd = 28v t r rise time ??? 3.2 4.8 i d = 1.0a t d(off) turn-off delay time ??? 32 48 r g = 6.0 ? t f fall time ??? 13 20 r d = 28 ? , c iss input capacitance ??? 740 ??? v gs = 0v c oss output capacitance ??? 190 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 71 ??? ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified)
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parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 2.0a, v gs = 0v t rr reverse recovery time ??? 60 90 ns t j = 25c, i f = 2.0a q rr reverse recoverycharge ??? 120 170 nc di/dt = -100a/s source-drain ratings and characteristics !"
repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd 4.7a, di/dt 220a/s, v dd v (br)dss , t j 150c notes: starting t j = 25c, l = 6.5mh r g = 25 ? , i as = 4.7a. (see figure 8) pulse width 300s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec s d g
irf7341 www.irf.com 3 1 10 100 3 4 5 6 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j

1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j
irf7341 4 www.irf.com 0 10 20 30 40 0.040 0.060 0.080 0.100 0.120 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v

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& # ? $ % ( ? ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.7a 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.1a 3.8a 4.7a 0 .04 0 .06 0 .08 0 .10 0 .12 0246810 a gs v , gate-to-source voltage (v) i = 4.7a d
irf7341 www.irf.com 5 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss !"% $

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0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.5a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irf7341 6 www.irf.com so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code
irf7341 www.irf.com 7 data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/05 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches)

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